Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method

Valery A. Voronin; Sergey K. Guba; Marina A. Litvin

doi:10.1117/12.368405

4 November 1999 Precipitation mechanism of GaAs_1-xP_x/GaAs in the isothermal CVD method

Valery A. Voronin, Sergey K. Guba, Marina A. Litvin

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368405
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl₃-AsCl₃-H₂ are discussed. The model describing the mechanism of GaAs_x-P_1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.

Citation Download Citation

Valery A. Voronin, Sergey K. Guba, and Marina A. Litvin "Precipitation mechanism of GaAs_1-xP_x/GaAs in the isothermal CVD method", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368405

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