Radiation-acoustic treatment of gallium phosphide light diodes

Volodimir P. Tartachnik; Olexsandr M. Gontaruk; Roman M. Vernydub; Anatoly M. Kryvutenko; Yaroslav M. Olikh; Vitalij Ya. Opilat; Igor V. Petrenko; Myroslava B. Pinkovska

doi:10.1117/12.368419

4 November 1999 Radiation-acoustic treatment of gallium phosphide light diodes

Volodimir P. Tartachnik, Olexsandr M. Gontaruk, Roman M. Vernydub, Anatoly M. Kryvutenko, Yaroslav M. Olikh, Vitalij Ya. Opilat, Igor V. Petrenko, Myroslava B. Pinkovska

Author Affiliations +

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368419
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave in different operating modes. Electroluminescence spectra were measured at room and low temperatures, integrated luminosity of devices was checked by solar cell. In order to find out the radiation field influence on non-equilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co⁶⁰. It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defect,s which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.

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Volodimir P. Tartachnik, Olexsandr M. Gontaruk, Roman M. Vernydub, Anatoly M. Kryvutenko, Yaroslav M. Olikh, Vitalij Ya. Opilat, Igor V. Petrenko, and Myroslava B. Pinkovska "Radiation-acoustic treatment of gallium phosphide light diodes", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368419

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