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12 November 1999 3C(beta)-SiC-on-insulator waveguide structures for modulators and sensor systems
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370332
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
In this work planar and rib (beta) -SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI. The losses have been measured at 1.3 and 1.55micrometers . Rib waveguides were fabricated using dry-etching. These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrian P. Vonsovici, Graham T. Reed, Mike R. Josey, Paul R. Routley, Alan G. R. Evans, and Fereydoon Namavar "3C(beta)-SiC-on-insulator waveguide structures for modulators and sensor systems", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370332
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