Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method

Terence ChaiLeng Wee; Boon Siew Ooi; Yan Zhou; Yuen Chuen Chan; Yee Loy Lam

doi:10.1117/12.370344

12 November 1999 Characterization of reactive ion etching of sol-gel SiO₂ using Taguchi optimization method

Terence ChaiLeng Wee, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, Yee Loy Lam

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370344
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

SiO₂ films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching process for sol-gel SiO₂ using a mixture of CF₄ and O₂ plasma. Parameters such as RF power, chamber pressure, CF₄ and O₂ flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

Citation Download Citation

Terence ChaiLeng Wee, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, and Yee Loy Lam "Characterization of reactive ion etching of sol-gel SiO₂ using Taguchi optimization method", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370344

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