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12 November 1999 Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370344
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Terence ChaiLeng Wee, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, and Yee Loy Lam "Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370344
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