Paper
12 November 1999 Radiative transitions in porous silicon
Huy Bui, Hoa Binh Phi, TranCao Dao, Van Hoi Pham, Duc Thinh Vu
Author Affiliations +
Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370374
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Radiative transitions in porous silicon (PS) have been studied using a new variant of the time-resolved photoluminescence (TRPL) spectroscopic measurement, in which beside the pulsed light source the sample was irradiated additionally by a continuous light source. With this modification a certain photoluminescence (PL) region in the TRPL spectrum of PS may be quelched, the position and width of which depends strictly on the wavelength range and intensity and the continuous light source. Using different continuous light sources, the quenching of different PL regions has been observed experimentally. The results obtained are discussed with the model of recombination in the core and on the surface of nanocrystallites. It seems that the selective quenching of PL in the TRPL spectrum is helpful to reveal the origin of the light emission for PS.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huy Bui, Hoa Binh Phi, TranCao Dao, Van Hoi Pham, and Duc Thinh Vu "Radiative transitions in porous silicon", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370374
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KEYWORDS
Picosecond phenomena

Light sources

Quenching (fluorescence)

Silicon

Electrons

Lamps

Luminescence

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