High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy

Ingrid De Wolf; Jian Chen; Mahmoud Rasras; W. Merlijn van Spengen; Veerle Simons

doi:10.1117/12.369313

11 November 1999 High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy

Ingrid De Wolf, Jian Chen, Mahmoud Rasras, W. Merlijn van Spengen, Veerle Simons

Author Affiliations +

Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369313
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

After a short introduction on the theory and instrumentation of Raman spectroscopy, its application for local stress and temperature measurements in semiconductor devices is discussed. Examples are given for silicon isolation structures, transistors, solder bumps and back-grinding. It is shown how the resolution can be improved by using an oil immersion objective and deconvolution techniques. Different imaging modes are discussed and their resolution is compared. Examples of 1D and of 2D scans are shown.

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Ingrid De Wolf, Jian Chen, Mahmoud Rasras, W. Merlijn van Spengen, and Veerle Simons "High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); https://doi.org/10.1117/12.369313

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