Mechanism for erbium luminescence in silicon at 1.54 um

Md. Quamrul Huda; Saiful Anam Siddiqui; Mohammed Nazrul Islam; Md. S. Islam

doi:10.1117/12.369416

9 November 1999 Mechanism for erbium luminescence in silicon at 1.54 μm

Md. Quamrul Huda, Saiful Anam Siddiqui, Mohammed Nazrul Islam, Md. S. Islam

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369416
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Origin of erbium luminescence at 1.54 micrometers , a prospective optical source in silicon based optoelectronics has been analyzed. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. At steady state of excitation, a certain fraction of erbium sites were found to remain occupied by electrons. Trapped electrons, which eventually recombine with holes in the valence band, provide the energy for (formula available in paper)yields (formula available in paper) transition of erbium atoms. It was however found that, even with 100 percent quantum efficiency of this energy transmission, not every electron- hole recombination corresponds to the excitation of an erbium atom. This wastage of recombination energy was attributed to the rather long lifetime of erbium decay. Capture and emission processes of photo generated excess carriers in the erbium related level have been equated for non-steady conditions. It has been shown that the steady state erbium luminescence actually follows a transient rise, typically of the order of few hundred microseconds. The anomalous behavior of continuous rise of erbium luminescence after termination of short excitation pulses of 30 μs microsecond has been explained mathematically for the first time.

Citation Download Citation

Md. Quamrul Huda, Saiful Anam Siddiqui, Mohammed Nazrul Islam, and Md. S. Islam "Mechanism for erbium luminescence in silicon at 1.54 μm", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369416

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available