Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure

Yong Tian Hou; Kie Leong Teo; Ming Fu Li; Kazuo Uchida; Hiroki Tokunaga; Nakao Akutsu; Koh Matsumoto

doi:10.1117/12.369390

9 November 1999 Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure

Yong Tian Hou, Kie Leong Teo, Ming Fu Li, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu, Koh Matsumoto

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369390
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Contactless electroreflectance (CER) of a GaN/InGaN/AlGaN multilayer structure grown on sapphire has been measured in the temperature range of 15K and 450K. Except for the GaN exciton structures, well-defined Franz-Keldysh Oscillations are observed above the AlGaN band gap. An electomodulational model based on complex Airy functions is used to analyze the FKOs line shape. The temperature dependence of transition energies is obtained both for GaN and AlGaN. The magnitude of the built in electric field in AlGaN layer is also determined. The temperature dependence of the electric field is found to be consistent with the variation of thermal strain in the epilayer. It is demonstrated that the built-in electric field can be identified to be due to the piezoelectric effect.

Citation Download Citation

Yong Tian Hou, Kie Leong Teo, Ming Fu Li, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu, and Koh Matsumoto "Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369390

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