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14 April 2000 Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4 laser
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Proceedings Volume 3929, Solid State Lasers IX; (2000)
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
A systematic investigation on a series of Nd:YVO4 crystals with different dopant concentration is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power. The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments. Based on the analysis, we demonstrate a compact and efficient diode-end- pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and approximately 1.1-m pulse energy at a pulse repetition rate of 10 Hz were produced.
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Yu-Fen Chen, C. C. Liao, Y. P. Lan, and S. C. Wang "Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4 laser", Proc. SPIE 3929, Solid State Lasers IX, (14 April 2000);

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