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24 March 2000 Effect of SiO2 cladding on properties of annealed proton-exchanged LiNbO3 waveguides
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Proceedings Volume 3936, Integrated Optics Devices IV; (2000) https://doi.org/10.1117/12.379946
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We show that SiO2 cladding effects on optical properties of annealed proton-exchanged (APE) LiNbO3 waveguides as well as on kinetic of annealing process. Annealing with previously deposited SiO2 film reduces the optical losses in APE LiNbO3 waveguides. The structural phase diagram of HxLi1-xNbO3 is also modified if annealing is performed with previously deposited SiO2 layer. The physical mechanisms, including evaporation of H2O and/or Li2O during annealing without deposited film and, as a result, formation of defects and lithium deficit phase is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri N. Korkishko, Vyacheslav A. Fedorov, Oksana Y. Feoktistova, Tamara V. Morozova, and Evgenii M. Paderin "Effect of SiO2 cladding on properties of annealed proton-exchanged LiNbO3 waveguides", Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); https://doi.org/10.1117/12.379946
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