Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells

Yang Fang Chen; Tai Yuan Lin; Hong-Chang Yang

doi:10.1117/12.382824

17 April 2000 Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells

Yang Fang Chen, Tai Yuan Lin, Hong-Chang Yang

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382824
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

Citation Download Citation

Yang Fang Chen, Tai Yuan Lin, and Hong-Chang Yang "Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382824

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