Performance Of Merck Selectilux P Positive Photoresist In Aluminium Plasma Etching And High Current Ion Implantation

Klaus Thiel

doi:10.1117/12.935129

7 November 1983 Performance Of Merck Selectilux P Positive Photoresist In Aluminium Plasma Etching And High Current Ion Implantation

Klaus Thiel

Author Affiliations +

Proceedings Volume 0394, Optical Microlithography II: Technology for the 1980s; (1983) https://doi.org/10.1117/12.935129
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

Recently, Merck has introduced a new novolak resin based positive resist system with improved performance in VLSI semiconductor processing. Performance data is presented in some detail. Topics stressed include the performance during aluminium etching using chlorine containing plasma and high current ion implantation. It will be shown that excellent performance can be obtained using certain processing techniques when severe thermal/reactive plasma environments are encountered.

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Klaus Thiel "Performance Of Merck Selectilux P Positive Photoresist In Aluminium Plasma Etching And High Current Ion Implantation", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935129

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