Optical characterization for combinatorial systems based on semiconductor ZnO

Takayuki Makino; G. Isoya; Yusaburo Segawa; C. H. Chia; T. Yasuda; Masashi Kawasaki; Akira Ohtomo; Kentaro Tamura; Yuji Matsumoto; Hideomi Koinuma

doi:10.1117/12.385422

17 May 2000 Optical characterization for combinatorial systems based on semiconductor ZnO

Takayuki Makino, G. Isoya, Yusaburo Segawa, C. H. Chia, T. Yasuda, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura, Yuji Matsumoto, Hideomi Koinuma

Author Affiliations +

Proceedings Volume 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development; (2000) https://doi.org/10.1117/12.385422
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We have developed the simultaneous optical measurement method by using the optic fiber bundles specialized for combinatorial samples combined with the arrayed charge coupled devices. This also can be used for experiments done at cryogenic temperatures. The smoother dependence upon various growth parameters could be obtained by virtue of the combinatorial fabrication method. Our present study revealed that the use of lattice-matched ScAlMgO₄ substrates greatly improved the optical (excitonic) properties of epitaxial ZnO layers as well as ZnO-based quantum wells. The improved points by virtue of lattice-matching are as follows: (1) reduction of the nonradiative decay rate of excitons, (2) settlement of the undesired criterion of well- width, the limit to which the relevant quantum confinement can be achieved, (3) bright excitonic photoluminescence at room temperature as the result of increased quantum efficiency.

Citation Download Citation

Takayuki Makino, G. Isoya, Yusaburo Segawa, C. H. Chia, T. Yasuda, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura, Yuji Matsumoto, and Hideomi Koinuma "Optical characterization for combinatorial systems based on semiconductor ZnO", Proc. SPIE 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development, (17 May 2000); https://doi.org/10.1117/12.385422

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