Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa2Cu3O7-X/YSZ/(1012)Al2O3 and YBa2Cu3O7-X/CeO2/(1012)Al2O3

Oleg A. Khymenko; Gennadii A. Melkov; Volodymyr S. Melnikov; Olena I. Okhay

doi:10.1117/12.385418

17 May 2000 Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa₂Cu₃O_7-X/YSZ/(1012)Al₂O₃ and YBa₂Cu₃O_7-X/CeO₂/(1012)Al₂O₃

Oleg A. Khymenko, Gennadii A. Melkov, Volodymyr S. Melnikov, Olena I. Okhay

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Proceedings Volume 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development; (2000) https://doi.org/10.1117/12.385418
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The growth of mainly c-axis oriented YBa₂Cu₃O_7-x thin films on a YSZ and CeO₂ buffer layers deposited on the R-plane sapphire substrates was investigated. Both films were grown by a pulsed laser deposition technique from the multi-component targets by in- situ successive target changing during deposition. The structure and compositional properties were studied by X-ray diffraction and pulsed laser spectroscopy, respectively. The electrical resistance and the surface impedance were measured by a four-probe DC-method and by the H₀₁₁ mode of a high-Q copper cavity at 135 GHz, respectively. A T_c is congruent to 86 K and (Delta) T_c is congruent to 4.1 K and R_s is congruent to 680 mOhm at 20 K for YBa₂Cu₃O_7-x thin films with YSZ buffer layer and T_c is congruent to 88.8 K with (Delta) T_c is congruent to 1.7 K and R_s is congruent to 105 mOhm at 20 K for YBa₂Cu₃O_7-x thin films with CeO₂ buffer layer were obtained by an research conditions of deposition for both films. Comparison of the films characteristics grown on sapphire substrates without any buffer layer showed a good perspective of the discussed technique for large area YBa₂Cu₃O_7-x thin films and multi-layer structures growth on sapphire too.

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Oleg A. Khymenko, Gennadii A. Melkov, Volodymyr S. Melnikov, and Olena I. Okhay "Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa₂Cu₃O_7-X/YSZ/(1012)Al₂O₃ and YBa₂Cu₃O_7-X/CeO₂/(1012)Al₂O₃", Proc. SPIE 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development, (17 May 2000); https://doi.org/10.1117/12.385418

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KEYWORDS

Thin films

Sapphire

Oxygen

Protactinium

Superconductors

Pulsed laser deposition

Surface finishing

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