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13 April 2000 Modeling of laser emission at 0.9 μm in Nd:LiNbO3
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Proceedings Volume 3942, Rare-Earth-Doped Materials and Devices IV; (2000) https://doi.org/10.1117/12.382865
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Modeling of laser oscillation at 0.9 micrometers in Ti waveguides in LiNbO3 doped with Nd ions is presented. Laser emission at 0.9 micrometers in Ti waveguides in Nd:LiNbO3 crystals was recently demonstrated. However, lasing was reported as unstable and lasting only a few seconds, with parasitic lasing at the higher gain transition at 1.08 micrometers shown to be a problem. In this work the possibility of obtaining efficient and stable laser oscillation at 0.9 micrometers in Ti:LiNbO3 waveguides, fabricated in substrates doped with Nd ions by thermal diffusion of thin metallic stripes or planar thin films, was theoretically evaluated. It was concluded that emission at 0.9 micrometers , with complete suppression of the parasitic emission at 1.08 micrometers , should be possible by selective increase of the losses at 1.08 micrometers , through optimization of waveguide and laser cavity, spatia localizations of the Nd ions and the use of the dependence on polarization of the emission cross sections at 0.9 and 1.08 micrometers .
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose M. M. M. de Almeida, Antonio M. P. P. Leite, and Jaymin Amin "Modeling of laser emission at 0.9 μm in Nd:LiNbO3", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); https://doi.org/10.1117/12.382865
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