Carrier cooling effects on the saturation characteristics of quantum well absorbers

Mark P. Mullane; Alexander V. Uskov; John Gerard McInerney

doi:10.1117/12.391405

14 July 2000 Carrier cooling effects on the saturation characteristics of quantum well absorbers

Mark P. Mullane, Alexander V. Uskov, John Gerard McInerney

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391405
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The effects of carrier cooling on the saturation characteristics of quantum well absorbers are theoretically investigated. A comprehensive many-body model is employed, and both excitonic effects and bandgap renormalization are shown to play a significant role. The detailed interplay between band-filling and many-body effects at low carrier temperatures is shown to lead to saturation characteristics that are highly spectrally dependent, and that cannot in general be identified by a linear saturation characteristic. In addition, a spectral regime of enhanced fast saturation is identified at or slightly below the exciton peak energy, which may provide a mechanism for previously observed mode-locking behavior.

Citation Download Citation

Mark P. Mullane, Alexander V. Uskov, and John Gerard McInerney "Carrier cooling effects on the saturation characteristics of quantum well absorbers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391405

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