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1 May 2000 Aging properties of 840-nm ion-implanted VCSELs monitored by analysis of their photoelectric properties
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Proceedings Volume 3946, Vertical-Cavity Surface-Emitting Lasers IV; (2000) https://doi.org/10.1117/12.384384
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Ion-implanted vertical cavity surface emitting lasers are analyzed by photocurrent spectroscopy. The photoelectric quantum efficiency of such a device was found to reveal information on the presence of defect levels within the device. Photocurrent spectra of the samples, that are in part aged, were measured. For aged devices we find up to a tenfold increase of the magnitude of a defect band energetically situated below the laser emission. We show that photocurrent spectroscopy, that so far has been successfully applied for studying aging properties of high-power diode lasers, has also a remarkable potential as analytical tool for vertical cavity surface emitting lasers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Wolfgang Tomm and A. Baerwolff "Aging properties of 840-nm ion-implanted VCSELs monitored by analysis of their photoelectric properties", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); https://doi.org/10.1117/12.384384
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