Paper
18 April 2000 High-power AlGaInAs/GaAs microstack laser bars
Christian Hanke, Lutz Korte, Bruno D. Acklin, Martin Behringer, Gerhard Herrmann, Johann Luft, B. De Odorico, Marcel Marchiano, Jens Wilhelmi
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Abstract
The maximum useful optical power of laser bars is limited due to thermal and lifetime constraints to typical values of 50 W/cm cw or 120 W/cm qcw. A promising new approach is the so-called microstack laser in which several laseractive areas are integrated vertically in the same monolithic structure. In order to drive these structures in series with high efficiency low-resistance tunnel-junctions have to be realized. By optimizing the MOVPE growth process tunnel- junctions with a specific differential resistivity of 2.5 X 10-4 (Omega) cm2 could be obtained, which are suitable for the monolithic inter-connection of laser structures.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Hanke, Lutz Korte, Bruno D. Acklin, Martin Behringer, Gerhard Herrmann, Johann Luft, B. De Odorico, Marcel Marchiano, and Jens Wilhelmi "High-power AlGaInAs/GaAs microstack laser bars", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382106
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Pulsed laser operation

High power lasers

Semiconductor lasers

Laser optics

Electro optics

Resistance

Laser damage threshold

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