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18 April 2000 Mid-IR type-II InAs/GaInSb interband cascade lasers
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Proceedings Volume 3947, In-Plane Semiconductor Lasers IV; (2000)
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report our progress to date in the development of type-II interband cascade lasers emitting in the mid-IR (3.8-to-4.0 micrometers ) spectral region. We have demonstrated significant improvements over previously reported results in terms of differential external quantum efficiency (approximately 500%), peak power (>4 W/facet), peak power conversion efficiency (approximately 7%), maximum operating temperature (217 K), and continuous-wave (cw) operation. We briefly review some results for pulsed excitation and then present more detailed operating characteristics for the cw performance of our lasers, including the output power characteristics and the dependence of the output spectrum on current.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Bradshaw, Rui Q. Yang, John D. Bruno, John T. Pham, and Donald E. Wortman "Mid-IR type-II InAs/GaInSb interband cascade lasers", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000);


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