High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition

Matthew Erdtmann; Anthony W. Matlis; Christopher Louis Jelen; Manijeh Razeghi; Gail J. Brown

doi:10.1117/12.382122

13 April 2000 High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition

Matthew Erdtmann, Anthony W. Matlis, Christopher Louis Jelen, Manijeh Razeghi, Gail J. Brown

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382122
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We have studied the dependence of the well doping density in n-type GaInAs/InP quantum well IR photodetectors (QWIPs) grown by low-pressure metalorganic chemical vapor deposition. Three identical GaInAs/InP QWIP structures were grown with well sheet carrier densities of 1 by 10¹¹ cm^-2, 3 by 10¹¹ cm^-2, and 10 by 10¹¹ cm^-2; all three samples had very sharp spectral response at (lambda) equals 9.0 micrometers . We find that there is a large sensitivity of responsivity, dark current, noise current, and detectivity with the well doping density. Measurements revealed that the lowest-doped samples had an extremely low responsivity relative to the doping concentration while the highest-doped sample had an excessively high dark current relative to doping. The middle-doped sample yielded the optimal results. This QWIP had a responsivity of 33.2 A/W and operated with a detectivity of 3.5 by 10¹⁰ cmHz^1/2W^-1 at a bias of 0.75 V and temperature of 80 K. This responsivity is the highest value reported for any QWIP in the (lambda) equals 8-9 micrometers range. Analysis is also presented explaining the dependence of the measured QWIP parameters to well doping density.

Citation Download Citation

Matthew Erdtmann, Anthony W. Matlis, Christopher Louis Jelen, Manijeh Razeghi, and Gail J. Brown "High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382122

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