III-V infrared detectors on Si substrates

Cengiz Besikci

doi:10.1117/12.382136

13 April 2000 III-V infrared detectors on Si substrates

Cengiz Besikci

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382136
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

There has been significant interest in high quality growth of III-V IR materials on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also eliminates the need for yield lowering substrate thinning process in hybrid integration. While the large lattice mismatch between Si and these materials seems to be an important obstacle for growing device quality materials on Si, encouraging results have been achieved recently. A review of these results and successful operation of InSb p- i-n detectors on Si substrates are presented in this paper. The detector layers were grown by molecular beam epitaxy on GaAs coated Si substrates. Unintentionally doped InSb layers grown on semi-insulating GaAs substrates under similar growth conditions yielded a 77K Hall mobility of 9 by 10⁴ cm²/V-sec. Peak voltage responsivity of the detectors on Si substrates was higher than 10⁴ V/W at 77K with tunneling and shunt leakage limited zero-bias differential resistance. While there have been only few studies on the growth of III-V IR detectors on Si substrates, the recent result are encouraging for decreasing the cost and increasing the yield of IR detector systems.

Citation Download Citation

Cengiz Besikci "III-V infrared detectors on Si substrates", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382136

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