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13 April 2000 Mid-IR InAsSb photovoltaic detectors
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Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382144
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We describe a mid-IR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors for high temperature operation. With a 9 percent Sb content, InAsSb is lattice matched to GaSb and thus provides an excellent material quality, with Shokley-Read lifetimes of the order of 200 ns as measured by photoconductive gain measurements as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelengths as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelength of 5 microns at room temperature. This makes InAsSb an ideal candidate for rom temperature detection in the 3-5 microns atmospheric window. Photovoltaic structures are characterized by current voltage characteristics as a function of temperature. Using the absorption value obtained on the test samples, a detectivity of 7 by 109 Jones can be obtained at a temperature of 250 K, which can easily be reached with Peltier cooling. This leads to a NETD lower than 80 mK.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anna Rakovska, Vincent Berger, Xavier Marcadet, Genevieve Glastre, Borge Vinter, K. Bouzehouane, Daniel Kaplan, and T. Oksehendler "Mid-IR InAsSb photovoltaic detectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382144
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