Paper
30 November 1983 Photodetectors For Long Wavelength Optical Fiber Communication Systems
Hiroshi Kanbe
Author Affiliations +
Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935174
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
Recent developments on a germanium avalanche photodiode (Ge-APD) and an InP/InGaAs-APD with a planar structure are described. The Ge-APD with a wide depletion layer had improved quantum efficiency and response speed at 1.55 μm wavelength. Transmission experiment using the Ge-APD showed 2 to 4 dB improvement in the minimum average received power yielding 10-9 error rate. A planar InP/InGaAs-APD with separated multiplication and absorption regions was fabricated by using a new technique for forming a guard ring. The guard ring junction was realized by Cd diffusion through a thin Si02 film. A low surface impurity density and linearly-graded junction were obtained by tie diffusion technique. A uniform multiplication gain of over 30 was achieved in the sensitive area.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Kanbe "Photodetectors For Long Wavelength Optical Fiber Communication Systems", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); https://doi.org/10.1117/12.935174
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KEYWORDS
Diffusion

Diodes

Indium gallium arsenide

Germanium

Avalanche photodetectors

Cadmium

Telecommunications

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