Silicide Infrared Camera Technology

F. D. Shepherd Jr.

doi:10.1117/12.935190

Translator Disclaimer

30 November 1983 Silicide Infrared Camera Technology

F. D. Shepherd Jr.

Author Affiliations +

Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935190
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

In recent years there have been rapid advances in infrared television cameras based upon metal-silicide focal plane arrays. These devices sense infrared via internal photo-emission of hot carriers a process that is analogous to vacuum photoemission. Internal photoemission is very reproducible and large arrays with cell to cell photoresponse uniformity better than 0.5% rms have been demonstrated. This uniformity has been exploited in the design of simplified cameras which require minimal pixel compensation. Projected applications of these cameras include medical diagnostics, reliability studies and infrared astronomy. The present paper will describe the development of the silicide camera technology, outline the physics of camera operation and demonstrate preliminary imagery in astronomy and thermal diagnostics.

Citation Download Citation

F. D. Shepherd Jr. "Silicide Infrared Camera Technology", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); https://doi.org/10.1117/12.935190

ACCESS THE FULL ARTICLE