Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications

El-Hang Lee

doi:10.1117/12.382166

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19 April 2000 Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications

El-Hang Lee

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Proceedings Volume 3950, Optoelectronic Integrated Circuits IV; (2000) https://doi.org/10.1117/12.382166
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.

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El-Hang Lee "Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications", Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); https://doi.org/10.1117/12.382166

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