Translator Disclaimer
Paper
27 April 2000 Significant improvement of an AlGaAs-GaAs NpnP optical thyristor with mirror layers
Author Affiliations +
Proceedings Volume 3952, Optoelectronic Interconnects VII; Photonics Packaging and Integration II; (2000) https://doi.org/10.1117/12.384403
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We present on the experimental results of the NpnP optoelectronic switching device with a significant optical sensitivity. This structure consists of a novel fully depleted optical thyristor (DOT) with a bottom mirror layers. We measure the emission efficiency for various sizes and injected currents. This device shows 20 percent and 45 percent enhancement in switching voltage change and spontaneous emission efficiency, respectively, which is very important for the sensitivity and the low power consumption of DOT.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Doo-Gun Kim, Jung-Jun Lee, Young-Wan Choi, Seok Lee, Deokha Woo, Byung Kwon Kang, Hwe-Jong Kim, Won Jun Choi, Yoon Ho Park, Hee Taek Yi, and Sun-Ho Kim "Significant improvement of an AlGaAs-GaAs NpnP optical thyristor with mirror layers", Proc. SPIE 3952, Optoelectronic Interconnects VII; Photonics Packaging and Integration II, (27 April 2000); https://doi.org/10.1117/12.384403
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top