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15 March 2000 Avalanche multiplication and noise in submicron Si p-i-n diodes
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379602
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We have measured avalanche multiplication and noise in Si p- i-n diodes with avalanche widths, w, of 0.12 micrometers , 0.18 micrometers and 0.32 micrometers , both for pure electron and mixed carrier injection. Multiplication and excess noise measurements were also performed with hole injection on a n+-i-p+ diode with w equals 0.84 micrometers . Pure electron initiated avalanche noise results were found to be almost indistinguishable in all three layers. The excess noise factor increases dramatically with increasing w when the injection is mixed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chee Hing Tan, John P. R. David, J. Clark, Graham J. Rees, S. A. Plimmer, David J. Robbins, David C. Herbert, Roger Timothy Carline, and Weng Y. Leong "Avalanche multiplication and noise in submicron Si p-i-n diodes", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); https://doi.org/10.1117/12.379602
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