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15 March 2000 Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors
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Proceedings Volume 3953, Silicon-based Optoelectronics II; (2000) https://doi.org/10.1117/12.379601
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We report on a novel solid state wavelength meter in the near infrared. The device is an array of six photodetectors based on polycrystalline germanium film evaporated on a silicon substrate and each element is a wavelength sensitive detector. We describe the design, the fabrication and the characterization of such device and we demonstrate its capability in the measurement of the wavelength of quasi- monochromatic light beams.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gianlorenzo Masini, Lorenzo Colace, and Gaetano Assanto "Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors", Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); https://doi.org/10.1117/12.379601
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