Total dose effects on CMOS active pixel sensors

Jan Bogaert; Bart Dierickx

doi:10.1117/12.385432

15 May 2000 Total dose effects on CMOS active pixel sensors

Jan Bogaert, Bart Dierickx

Proceedings Volume 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications; (2000) https://doi.org/10.1117/12.385432
Event: Electronic Imaging, 2000, San Jose, CA, United States

Abstract

Co⁶⁰ irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage effects such as field leakage currents and dark current increase are discussed in detail. Two different approaches to overcome these problems are considered and their advantages and disadvantages are compared. Total dose results are presented on a pixel that can tolerate more than 200 kGy(Si) (20 Mrad(Si)) from a Co⁶⁰ source.

Citation Download Citation

Jan Bogaert and Bart Dierickx "Total dose effects on CMOS active pixel sensors", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); https://doi.org/10.1117/12.385432

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