Paper
3 February 2000 Layout postprocessing in ion projection lithography (IPL)
Hans Hartmann, Alex Petraschenko, Stefan Schunk, Richard Steinmetz, Ernst Haugeneder, Hans Loeschner
Author Affiliations +
Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377097
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Several post-optical lithography technologies are under development. Ion proj ecti on lithography (IPL) is one choice. For the industrial usage of the ion projection lithography a powerful software tool for layout post processing is necessary to achieve the required (TI) uniformity and pattern fidelity. The application of stencil masks in the IPL exposure step requires the concept of complementary masks. The IPL software has to provide the mask pattern split and the complementary mask layout as well as a mask pattern pre-distortion in order to compensate ion optical and membrane stress induced pattern distortions. The IPL specific pattern transfer process shows fig. I. The goal of this figure is to achieve a correspondence between chip layout on design level and wafer layout.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Hartmann, Alex Petraschenko, Stefan Schunk, Richard Steinmetz, Ernst Haugeneder, and Hans Loeschner "Layout postprocessing in ion projection lithography (IPL)", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377097
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Ions

Projection lithography

Image processing

Lithography

Mask making

Chemical elements

RELATED CONTENT


Back to Top