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3 February 2000 Mask error enhancement factor
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377094
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Optical lithography at the limit of resolution is a highly non-linear pattern transfer process. One consequence of this is an apparent magnification of mask errors. The paper first demonstrates early experimental evidence of this effect. Then it assesses the influence of pattern geometry, of the lithography tool setup, and of different optical enhancement techniques on the MEEF using primarily simulation data. The correspondence of MEEF as an effect of mask linewidth variations to the increased printability of mask defects is illustrated. Strategies to minimize the MEEF--like alternating phase shift masks--are presented. Because the MEEF describes conveniently the concerted action of all components on the whole lithographic pattern transfer process, it is proposed to use the MEEF as a new yardstick to characterize the degree of difficulty of a given lithographic process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilhelm Maurer "Mask error enhancement factor", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377094
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