Paper
3 February 2000 Optical proximity effects in submicron photomask CD metrology
Author Affiliations +
Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377105
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
Understanding how optical proximity effects (OPE) influence critical dimension (CD) measurements of photomasks and wafers in semiconductor manufacturing has been a subject of intense interest and investigation for many years. OPE, caused by the convolution of the intensity profiles of adjacent lines, introduces errors in the determination of the line edge position, and in turn the linewidth. This paper models several imaging systems using the Optical Transfer Function analysis method and discusses some results from an ongoing study to devise methods for calibrating CD mask metrology tools, and evaluates several different imaging objects and line measurement algorithms as to their sensitivity to the influences of OPE in the measurement of binary masks.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicholas G. Doe and Richard D. Eandi "Optical proximity effects in submicron photomask CD metrology", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377105
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Optical transfer functions

Critical dimension metrology

Imaging systems

Photomasks

Calibration

Spatial frequencies

Modulation

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