Reticle imaging and metrology using a CD-SEM at IMEC

A. James; F. Felten; M. Polli; Jonathan G. England; Thomas Marschner; Geert Vandenberghe

doi:10.1117/12.377102

3 February 2000 Reticle imaging and metrology using a CD-SEM at IMEC

A. James, F. Felten, M. Polli, Jonathan G. England, Thomas Marschner, Geert Vandenberghe

Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377102
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany

Abstract

Reticle imaging and metrology are becoming increasingly difficult as reticle features decrease in size. This paper describes some early results of top down CD-SEM reticle imaging and metrology carried out in association with the DUV and 193 nm lithography programs at IMEC. Images of reticle features and some corresponding printed wafer patterns are presented and CD-SEM and optical measurement techniques are compared.

Citation Download Citation

A. James, F. Felten, M. Polli, Jonathan G. England, Thomas Marschner, and Geert Vandenberghe "Reticle imaging and metrology using a CD-SEM at IMEC", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377102

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