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21 July 2000 Characterization of a novel double-gas-jet laser plasma EUV source
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A novel laser plasma EUV source geometry based on a (pulsed) double gas jet system has been characterized for utilization in EUV Lithography. The use of a secondary annular jet of a buffer gas in conjunction with the primary jet of target gas provides a considerable gain in EUV yield of an order of magnitude. The best CE data at 12.8 nm were obtained using xenon as target gas and hydrogen as buffer gas. The plasma source was driven using a short-wavelength KrF laser (0.9 J, 27 ns). Conversion efficiencies (CE) and EUV pulse shapes have been measured using calibrated Mo/Si multilayer mirrors and filtered junction diodes. A pinhole camera, equipped with a back illuminated CCD camera, was used to determine the plasma size in a wavelength range from 6 - 16 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rene de Bruijn, Andrzej Bartnik, H. F. Fledderus, Henryk Fiedorowicz, Petra Hegeman, Raluca C. Constantinescu, and Fred Bijkerk "Characterization of a novel double-gas-jet laser plasma EUV source", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000);


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