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21 July 2000 Control of resist heating effect
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Abstract
The electron beam (EB) writing system with high acceleration voltage must be used for the mask fabrication because of its fine resolution. In this case, the resist heating effect becomes one of the serious problems in CD control. This paper discusses the controllability of the resist heating effect and shows that; (1) The CD variation caused by the effect increases with higher pattern coverage and larger shot size, which supports qualitatively results of temperature simulation based on Ralf's model. (2) The multiple exposure is effective to suppress the temperature rise in a substrate and the CD variation. The shifting-type exposure is more effective than the non-shifting-type exposure for suppression of the effect. (4) The CD variation for ZEP7000 can be suppressed to less than 5.0 [nm] (range) provided the shot size is less than or equal to 1.0 [micrometer] and the shifting-type exposure is adopted. Thus, the resist heating effect can be controlled and the CD variation by the effect can be suppressed enough for fabricating the masks to produce 0.15 micrometer devices and beyond.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirohito Anze, Takayuki Abe, Hideaki Sakurai, Tomohiro Iijima, Yoshiaki Hattori, Noriaki Nakayamada, and Takashi Kamikubo "Control of resist heating effect", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390061
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