Paper
21 July 2000 Investigation of proximity effect correction in electron projection lithography (EPL)
Teruaki Okino, Kazuaki Suzuki, Kazuya Okamoto, Shintaro Kawata, Kiyoshi Uchikawa, Syouhei Suzuki, Sumito Shimizu, Tomoharu Fujiwara, Atsushi Yamada, Koichi Kamijo
Author Affiliations +
Abstract
An electron projection lithography (EPL) system which projects reticle patterns onto a wafer will be applied to sub 100 nm lithography. Requirements for line width accuracy are very strict as feature sizes are less than 100 nm. For electron beam lithography, proximity effect corrections have always been an important issue for accurate feature width control. In this paper characteristics of several correction methods are examined, and appropriate correction methods for 100 kV EPL are introduced. Employing the shape correction method burdens the reticle pattern preparation system much more than other methods. Therefore a calculation method suitable for 100 kV EPL where the backscatter radius is very wide ((beta) b approximately equals 30 micrometer) and the forward scatter radius is narrow ((beta) f approximately equals 7 nm) has been developed. The calculation of deposition energy by the backscattered electron beam is carried out with a coarse grid but wide range. The calculation of the combined effect of the electron scattering blurs from the features is carried out only within a narrow range. The correction calculation is carried out using both of these results. Using this method, accurate and fast calculations can be achieved. Employing the GHOST correction method increases total exposure cost. The practical GHOST correction methods may also be improved. An additional correction method named shape correction with GHOST is also shown.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruaki Okino, Kazuaki Suzuki, Kazuya Okamoto, Shintaro Kawata, Kiyoshi Uchikawa, Syouhei Suzuki, Sumito Shimizu, Tomoharu Fujiwara, Atsushi Yamada, and Koichi Kamijo "Investigation of proximity effect correction in electron projection lithography (EPL)", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390059
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Cited by 5 scholarly publications.
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KEYWORDS
Reticles

Semiconducting wafers

Lithography

Electron beam lithography

Projection lithography

Silicon

Scattering

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