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2 June 2000 Defect printability for sub-0.18-micron design rules using 193-nm lithography process and binary OPC reticle
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In the next few years, advanced process technologies in Wafer Fabs will migrate rapidly to ArF lithography for the 100 nm node and beyond. Reticle enhancement techniques (OPC, PSM) will be used more widely in multiple masking layers. However, a challenge in the manufacturing of OPC/PSM reticles is the lack of a precise specification for defect inspection to reflect the printability on wafers. In this paper, a binary mask with OPC/SB and with both CF/DF polarities comprising of 3 design rules: 0.13, 0.15 and 0.18 micrometer, will be used for the defect printability study. Polysilicon test wafers with SiON anti-reflective film will be processed with a standard 248 nm DUV resist on the ASM5500/500 scanner and with a 193 nm resist on the ASM5500/900 scanner, using the highest NA (0.63) an the highest sigma (0.60) possible. Differential SEM CDs between defect features and nominal features (without defect) will be analyzed for each design rule and for each wavelength respectively. SEM images of Clear and Dark field patterns for 193 nm exposure will be shown qualitatively. Finally, the impact of scattering bar sizing and reticle repairs to the wafer printability at 193 nm will be discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khoi A. Phan, Chris A. Spence, Jeff A. Schefske, Uzodinma Okoroanyanwu, and Harry J. Levinson "Defect printability for sub-0.18-micron design rules using 193-nm lithography process and binary OPC reticle", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000);


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