Integrated reflectance for monitoring silicon oxynitride antireflective coatings on a CVD cluster tool

James Matt Holden; William A. McGahan; Martin J. Seamons

doi:10.1117/12.386493

2 June 2000 Integrated reflectance for monitoring silicon oxynitride antireflective coatings on a CVD cluster tool

James Matt Holden, William A. McGahan, Martin J. Seamons

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386493
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A mapping reflectometer has been integrated into the load robotics of a multi-chamber, thin film deposition tool. Normal incidence reflectance metrology is used to monitor PE-CVD silicon oxynitride films. Reflectance data is modeled to obtain film thickness and extrapolate refractive index and extinction coefficient at DUV wavelengths using an interpolation dispersion model. The interpolation model is an empirical, process specific dispersion model that uses one or two adjustable parameters to interpolate between well- characterized 'node' films. The node film dispersions are characterized by multiple-angle spectroscopic ellipsometry over the spectral range of 200 nm to 800 nm. The model parameters are correlated to process variables which affect the index of the deposited oxynitride film directly such as the SiH₄:N₂O flow ratio and the total flow. The capabilities of the instrument are demonstrated by measuring a 5-layer, ILD stack for a dual damascene/copper process.

Citation Download Citation

James Matt Holden, William A. McGahan, and Martin J. Seamons "Integrated reflectance for monitoring silicon oxynitride antireflective coatings on a CVD cluster tool", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386493

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KEYWORDS

Refractive index

Silicon

Metrology

Silicon films

Reflectivity

Semiconducting wafers

Data modeling

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