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2 June 2000 Monte Carlo model of charging in resists in e-beam lithography
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Abstract
Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We shows first in detail how the non-unity yield of electron generation in insulator resist leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.
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Yeong-Uk Ko, Justin J. Hwu, and David C. Joy "Monte Carlo model of charging in resists in e-beam lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386526
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