Phase profilometry for the 193-nm lithography gate stack

Nickhil H. Jakatdar; Xinhui Niu; Junwei Bao; Costas J. Spanos; Sanjay K. Yedur; Alain G. Deleporte

doi:10.1117/12.386464

2 June 2000 Phase profilometry for the 193-nm lithography gate stack

Nickhil H. Jakatdar, Xinhui Niu, Junwei Bao, Costas J. Spanos, Sanjay K. Yedur, Alain G. Deleporte

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386464
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.

Citation Download Citation

Nickhil H. Jakatdar, Xinhui Niu, Junwei Bao, Costas J. Spanos, Sanjay K. Yedur, and Alain G. Deleporte "Phase profilometry for the 193-nm lithography gate stack", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386464

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