Process window metrology

Christopher P. Ausschnitt; William Chu; Linda M. Hadel; Hok Ho; Peter Talvi

doi:10.1117/12.386468

2 June 2000 Process window metrology

Christopher P. Ausschnitt, William Chu, Linda M. Hadel, Hok Ho, Peter Talvi

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386468
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

This paper is the third of a series that defines a new approach to in-line lithography control. The first paper described the use of optically measurable line-shortening targets to enhance signal-to-noise and reduce measurement time. The second described the dual-tone optical critical dimension (OCD) measurement and analysis necessary to distinguish dose and defocus. Here we describe the marriage of dual-tone OCD to SEM-CD metrology that comprises what we call 'process window metrology' (PWM), the means to locate each measured site in dose and focus space relative to the allowed process window. PWM provides in-line process tracking and control essential to the successful implementation of low-k lithography.

Citation Download Citation

Christopher P. Ausschnitt, William Chu, Linda M. Hadel, Hok Ho, and Peter Talvi "Process window metrology", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386468

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