Paper
2 June 2000 Specular spectroscopic profilometry for the sub-0.18-um polySi-gate processes
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Abstract
Specular Spectroscopic Profilometry (SSP), or Phase Profilometry (PP), has been proposed for in-situ/in-line patterned thin-film measurements. This is usually accomplished by using a rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, specular spectroscopic profilometry is applied in DUV lithography and etch processes as a profile extraction metrology. One focus-exposure experiment is conducted by using 0.18 micrometer lithography technology, another focus-exposure experiment is conducted by using 0.18 micrometer lithography and etch technology. Comparison between the measurement from CD-SEM, CD-AFM and PP are discussed and explained.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinhui Niu, Nickhil H. Jakatdar, Sanjay K. Yedur, and Bhanwar Singh "Specular spectroscopic profilometry for the sub-0.18-um polySi-gate processes", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386449
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Cited by 2 scholarly publications.
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KEYWORDS
Spectroscopy

Metrology

Diffraction

Diffraction gratings

Lithography

Etching

Thin films

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