Paper
23 June 2000 Advanced materials for 193-nm resists
Tohru Ushirogouchi, Koji Asakawa, Naomi Shida, Takeshi Okino, Satoshi Saito, Yoshinori Funaki, Akira Takaragi, Kentaro Tsutsumi, Tatsuya Nakano
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Abstract
Acrylate monomers containing alicyclic side chains featuring a series of polar substituent groups were assumed to be model compounds. Solubility parameters were calculated for the corresponding acrylate polymers. These acrylate monomers were synthesized using a novel aerobic oxidation reaction employing N-hydroxyphtalimide (NHPI) as a catalyst, and then polymerized. These reactions were confirmed to be applicable for the mass-production of those compounds. The calculation results agreed with the hydrophilic parameters measured experimentally. Moreover, the relationship between the resist performance and the above-mentioned solubility parameter has been studied. As a result, a correlation between the resist performance and the calculated solubility parameter was observed. Finally, resolution of 0.13-micron patterns, based on the 1G DRAM design rule, could be successfully fabricated by optimizing the solubility parameter and the resist composition.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tohru Ushirogouchi, Koji Asakawa, Naomi Shida, Takeshi Okino, Satoshi Saito, Yoshinori Funaki, Akira Takaragi, Kentaro Tsutsumi, and Tatsuya Nakano "Advanced materials for 193-nm resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388279
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CITATIONS
Cited by 6 scholarly publications and 3 patents.
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KEYWORDS
Polymers

Chromatography

Etching

Oxidation

Resistance

Molecules

Cobalt

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