Application of photodecomposable base concept to 193-nm resists

Munirathna Padmanaban; Jun-Bom Bae; Michelle M. Cook; Woo-Kyu Kim; Axel Klauck-Jacobs; Takanori Kudo; M. Dalil Rahman; Ralph R. Dammel; Jeff D. Byers

doi:10.1117/12.388278

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23 June 2000 Application of photodecomposable base concept to 193-nm resists

Munirathna Padmanaban, Jun-Bom Bae, Michelle M. Cook, Woo-Kyu Kim, Axel Klauck-Jacobs, Takanori Kudo, M. Dalil Rahman, Ralph R. Dammel, Jeff D. Byers

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Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388278
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

This paper reports on the use of trimethyl sulfonium hydroxide as a base additive for 193 nm applications, which is found to stabilize the latent image as well a act as a photodecomposable base. Delay time stability (exposure to post-exposure bake) of formulations consisting of trimethylsulfonium hydroxide is compared to that of a non- photodecomposable base (diethanolamine) in both methacrylate- and cycloolefin-based 193 nm resists. Resist formulations made using the trimethylsulfonium base were stable for more than one hour, while the reference formulation with diethanolamine showed T-top formation within 10 minutes delay time under the same conditions. The trialkylsulfonium hydroxide base additives were found to be photodecomposable by measuring the acid produced upon exposure. Compared to a non- photodecomposable base containing resist, the photodecomposable base containing resist produced more acid in the exposed areas under identical PAG/BASE molar ratios.

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Munirathna Padmanaban, Jun-Bom Bae, Michelle M. Cook, Woo-Kyu Kim, Axel Klauck-Jacobs, Takanori Kudo, M. Dalil Rahman, Ralph R. Dammel, and Jeff D. Byers "Application of photodecomposable base concept to 193-nm resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388278

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