ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

Geunsu Lee; Cha-Won Koh; Sung-Eun Hong; Jae Chang Jung; Min-Ho Jung; Hyeong-Soo Kim; Ki-Ho Baik

doi:10.1117/12.388303

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23 June 2000 ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

Geunsu Lee, Cha-Won Koh, Sung-Eun Hong, Jae Chang Jung, Min-Ho Jung, Hyeong-Soo Kim, Ki-Ho Baik

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Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388303
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In our previous model, we have introduced a lot of t- butylcarboxylate group in matrix resin to achieve a high contrast and obtain a good lithographic performance. Most ArF photoresists having only t-butylcarboxylate group as a dissolution inhibitor have showed by far the inferior performance in a poor amine controlled environment. To overcome this problem, we greatly reduced the usage of t-butyl carboxylate group and increased the amount of HMEBC that contains both carboxylic acid group and alcohol group. And also, we newly introduced acid labile cross-linker for high contrast. Our novel resist exhibited an excellent lithographic performance without any protective top coating material, namely, a good PED (post exposure delay) stability, an improved CD (Critical Dimension) linearity, a proper sensitivity for process, and a good contrast. In addition, its synthetic yield is very high (>50%) and then it is cost- effective for mass production. 120 nm patterns were successfully defined at 13 mJ/cm² by using a BIM (Binary Intensity Mask) with 2/3 annular (0.50/0.75(sigma) ).

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Geunsu Lee, Cha-Won Koh, Sung-Eun Hong, Jae Chang Jung, Min-Ho Jung, Hyeong-Soo Kim, and Ki-Ho Baik "ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388303

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