Paper
23 June 2000 Comparison of acrylate and methacrylate resin system in ArF lithography
Yasunori Uetani, Hiroaki Fujishima
Author Affiliations +
Abstract
Using 2MAdMA(2-Metyl-2-Adamantylmethacrylate), 2MAdAA(2-Metyl- 2-Adamantylacrylate), GBLMA((gamma) -butyrolactone methacrylate), GBLAA((gamma) -butyrolactone acrylate) monomers, 4 types of copolymers, 2MAdMA/GBLMA, 2MAdMA/GBLAA, 2MAdAA/GBLMA, 2MAdAA/GBLAA resins were prepared. The same PAG formulation was applied to these resins to make ArF resist samples. Resolution capability, dry-etching resistance were evaluated. From the result, it can be concluded that 2MAdAA/GBLMA resin system has the best balance in dry etching resistance, resolution and sensitivity.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunori Uetani and Hiroaki Fujishima "Comparison of acrylate and methacrylate resin system in ArF lithography", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388260
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Resistance

Lithography

Semiconducting wafers

Dry etching

Etching

Polymerization

Adhesives

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