High-performance EB chemically amplified resists using alicyclic protective groups

Jun-Ichi Kon; Koji Nozaki; Takahisa Namiki; Ei Yano

doi:10.1117/12.388288

23 June 2000 High-performance EB chemically amplified resists using alicyclic protective groups

Jun-Ichi Kon, Koji Nozaki, Takahisa Namiki, Ei Yano

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388288
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The impact of alicyclic protective groups on acid-labile substituents in a vinylphenol-methacrylate-based chemically amplified positive resist was investigated. The resist consists of the copolymer of vinylphenol and adamantyl methacrylate (VP/AdMA) with triflate onium salt as a photo- acid generator. The alicyclic protective groups in our system show a higher reactivity and higher hydrophobicity than those of the tert-butyl group, which is widely used in chemically amplified resists. The resists containing the alicyclic protective group resolved 0.09-micrometer hole patterns at 6 (mu) C/cm², and a resist with a base additive resolved 0.12-micrometer line and space patterns at 9.0 (mu) C/cm² using a 50-keV EB lithography system with a 2.38% TMAH aqueous solution as the developer. The dry etching durability of resists containing the alicyclic group was also compared with resists containing the tert-butyl group and with polyvinylphenol (PVP). The dry etching durability of our resists for a C₄F₈ plasma was 1.3 times superior to that of resist containing the tert-butyl group, and 1.1 times better than that of PVP. This means the thickness of film in pattern fabrication can be reduced to obtain a higher sensitivity and higher resolution.

Citation Download Citation

Jun-Ichi Kon, Koji Nozaki, Takahisa Namiki, and Ei Yano "High-performance EB chemically amplified resists using alicyclic protective groups", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388288

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