Improvement of resist profile roughness in bilayer resist process

Chang-Young Jeong; Sang-Wook Ryu; Ki-Yeop Park; Won-Kyu Lee; Seung-Woog Lee; Dai-Hoon Lee

doi:10.1117/12.388368

23 June 2000 Improvement of resist profile roughness in bilayer resist process

Chang-Young Jeong, Sang-Wook Ryu, Ki-Yeop Park, Won-Kyu Lee, Seung-Woog Lee, Dai-Hoon Lee

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388368
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The bi-layer resist (BLR) process, which first accomplish imaging on a thin top layer and transfer it down to a thick organic layer, is one of newly emerging patterning techniques in silicon processing. In this work, we studied the lithographic performance of the BLR process adopting FK- SP^TM (Fujifilm Olin Co.) as top layer material and various organic material as bottom layer. Generally, considerable advantages of planarization, reduced substrate reflection, improved process latitude, and of enhanced resolution are achieved. However, the resolution and the process latitude are highly affected by surface interaction between the top resist and the bottom material. Moreover, the BLR process has a sidewall roughness problem related to the material factors of the resist and the degraded aerial image contrast, which can affect the reliability of the device. We found that thermal curing treatment applied after development with the consideration of the glass transition temperature are very effective in reducing the line edge roughness. More smooth and steep patterning is achieved by the thermal treatment. The linewidth controllability is below 10 nm and the k₁ value is reduced from 0.5 down to 0.32 in this process. The reactive ion etching adopting O₂ gas demonstrated selectivity of the top resist over bottom material more than 15:1, together with residue-free and vertical wall profile.

Citation Download Citation

Chang-Young Jeong, Sang-Wook Ryu, Ki-Yeop Park, Won-Kyu Lee, Seung-Woog Lee, and Dai-Hoon Lee "Improvement of resist profile roughness in bilayer resist process", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388368

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available