Lithography and line-edge roughness of high-activation-energy resists

Seiya Masuda; Xiaoming Ma; G Noya; Georg Pawlowski

doi:10.1117/12.388309

23 June 2000 Lithography and line-edge roughness of high-activation-energy resists

Seiya Masuda, Xiaoming Ma, G Noya, Georg Pawlowski

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388309
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Lithographic performance and line-edge roughness (LER) of several experimental high activation energy resists containing hydroxystyrene-co-styrene-co-t-butylmethacrylate terpolymers have been determined as a function of illumination conditions, polymer, photoacid generator and quencher composition, as well as process variations. Important lithographic properties, such as iso/dense bias, exposure latitude, may deteriorate upon minimization of LER. LER is largely affected by the changes of the optical settings, while material and process influences are less pronounced.

Citation Download Citation

Seiya Masuda, Xiaoming Ma, G Noya, and Georg Pawlowski "Lithography and line-edge roughness of high-activation-energy resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388309

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